AP70T03GS - Advanced Power Electronics

AP70T03GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole versio.

Features

Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200411052-1/4 AP70T03GS/P Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.032 Max. Units 9 18 3 1 250 ±100 V V/℃ mΩ mΩ V S uA uA .