AP70T03GS |
Part Number | AP70T03GS |
Manufacturer | Advanced Power Electronics |
Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is univers... |
Features |
Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
-55 to 175 -55 to 175
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Units ℃/W ℃/W
Data and specifications subject to change without notice
200411052-1/4
AP70T03GS/P
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.032
Max. Units 9 18 3 1 250 ±100 V V/℃ mΩ mΩ V S uA uA ... |
Document |
AP70T03GS Data Sheet
PDF 59.17KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP70T03GH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP70T03GH-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP70T03GH-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP70T03GI |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP70T03GJ |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |