AP70T03GJ-HF - Advanced Power Electronics

AP70T03GJ-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applicat.

Features

Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 30 V +20 V 60 A 43 A 195 A 53 W 0.36 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 2.8 62.5 110 Units ℃/W ℃/W ℃/W.