AP70T03GI - Advanced Power Electronics

AP70T03GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. BVDSS RDS(ON) ID 30V 9mΩ 60A GD S TO-220CFM(I) Absolute Maximum Ratings Symbol .

Features

Maximum Thermal Resistance, Junction-ambient Value 4.0 65 Units V V A A A W ℃ ℃ Units ℃/W ℃/W Data and specifications subject to change without notice 1 200805051 AP70T03GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain (.