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AP6677GH |
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| Part Number | AP6677GH |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely pref... |
| Features |
Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 1.8 62.5
Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200901221
Free Datasheet http://www.datasheet4u.com/
AP6677GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.5V, ID=-20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Volt... |
| Document |
 AP6677GH Data Sheet
PDF 168.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AP6677GH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP6679BGH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP6679BGI-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP6679BGJ-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP6679BGJB-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|