AP4525GEH - Advanced Power Electronics

AP4525GEH N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuo.

Features

Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 12 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200725064-1/7 www.DataSheet4U.com AP4525GEH N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.03 6 9 1.5 4 7 20 20 4 580 100 70 2 Max. Units 28 32 3 1 25 ±30 14 930 3 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns.