AP4525GEH-A - Advanced Power Electronics

AP4525GEH-A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

D1/D2 N-CH S1 G1 S2 G2 P-CH TO-252-4L BVDSS RDS(ON) ID BVDSS RDS(ON) ID 40V 26mΩ 8.3A -40V 40mΩ -7A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID.

Features

0 6.6 -5.6 50 -50 3.125 0.025 -55 to 150 -55 to 150 Max. Max. Value 8 40 S2 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W ℃/W Data and specifications subject to change without notice 200627071-1/7 AP4525GEH-A N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=6A V.