AP4500GM-HF - Advanced Power Electronics

AP4500GM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4500 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 20V 30mΩ 6A -20V 50mΩ -5A D2 The SO-8 p.

Features

A=25℃ Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor +12 +12 6 -5 4.8 -4 20 -20 2.0 0.016 V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501087 AP4500GM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions .