AP4503AGM-HF - Advanced Power Electronics

AP4503AGM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 D2 G1 S1 G2 S2 Absolute Maximu.

Features

V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W 1 201011252 Data and specifications subject to change without notice http://www.Datasheet4U.com AP4503AGM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=6A VGS=4.5V, ID=4A Min. 30 1 - Typ. 6 8.4 1.4 4.7 5 8 18.5 9 485 .