AP4503AGEM-HF - Advanced Power Electronics

AP4503AGEM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4503A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applicatio.

Features

TA=25℃ TSTG TJ Gate-Source Voltage Drain Current , VGS @ 10V3 Drain Current , VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 +20 7.0 -5.0 5.5 -4.0 20 -20 2 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501063 AP4503AGEM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS .