AP4435D - Advanced Power Electronics

AP4435D ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Cu.

Features

4435D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 - Typ. -0.03 Max. Units 20 35 -3 -1 -25 ±100 42 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o RDS(ON) www.DataSheet4U.com V GS(th) VGS=-10V, ID=-9A VGS=-4.5V, ID=-5A VDS=.