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AP4435D |
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| Part Number | AP4435D |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D G S Absolute Maximum ... |
| Features |
4435D
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions
Min. -30 -1 -
Typ. -0.03
Max. Units 20 35 -3 -1 -25 ±100 42 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
RDS(ON)
www.DataSheet4U.com V
GS(th)
VGS=-10V, ID=-9A VGS=-4.5V, ID=-5A VDS=... |
| Document |
 AP4435D Data Sheet
PDF 104.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP4435 |
Advanced Power Electronics |
30 P-Channel Enhancement-Mode MOSFET |
|
| 2 | AP4435GH |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP4435GH-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP4435GJ |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP4435GJ-HF |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|