AP4435GM-HF - Advanced Power Electronics

AP4435GM-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings.

Features

emperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200811216 Free Datasheet http://www.datasheet4u.net/ AP4435GM-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A Min. -30 -1 - Typ. 16 18 3 10 8 6.6 44 34 195 190 Max. Units 20 32 -3 -1 -25 +100 29 V mΩ mΩ V S uA uA nA nC nC n.