AP4435GM - Advanced Power Electronics

AP4435GM P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum.

Features

rmal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit ℃/W Data and specifications subject to change without notice 201124043 AP4435GM Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.04 15 26 20 36 5.5 3.5 12 8 75 40 1530 900 280 6 Max. Units 20 32 -3 -1 -25 ±100 9 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=-1mA RDS(ON) Static Drain-Sou.