AP2306GN-HF - Advanced Power Electronics

AP2306GN-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Ga.

Features

Unit ℃/W Data and specifications subject to change without notice 1 200902044 Free Datasheet http://www.datasheet4u.com/ AP2306GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min. 20 0.5 - Typ. 13 8..