Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for all commercial-industrial applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Ga.
0 Unit ℃/W 1 200904271 Data and specifications subject to change without notice AP2306CGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=5 VGS=2.5V, ID=2.5A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP2306AGEN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP2306AGEN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP2306AGN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP2306AGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE | |
5 | AP2306AGN-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP2306GN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | AP2306GN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | AP2306GN-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
9 | AP2306N |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
10 | AP2306N |
VBsemi |
N-Channel MOSFET | |
11 | AP2301 |
BCD Semiconductor |
1.5A DDR TERMINATION REGULATOR | |
12 | AP2301 |
Diodes Incorporated |
2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH |