Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-.
specifications subject to change without notice 1 200812031 AP2306AGEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=4A VGS=2.5V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=30V, VGS=0V VGS=+6V ID=3A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=5V RD=15Ω VGS=0V VDS=25V f=1.0MHz Min. 30 0.5 - Typ. 15 8.7 1.3 3.5 65 130 470 290 610 60 50 Max. Units 50 72 1.5 10 +30 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP2306AGEN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP2306AGN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP2306AGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE | |
4 | AP2306AGN-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP2306CGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP2306GN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | AP2306GN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | AP2306GN-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
9 | AP2306N |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
10 | AP2306N |
VBsemi |
N-Channel MOSFET | |
11 | AP2301 |
BCD Semiconductor |
1.5A DDR TERMINATION REGULATOR | |
12 | AP2301 |
Diodes Incorporated |
2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH |