Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2306AGN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in med.
ture Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2306AGN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 200810141-3 1/5 Advanced Power Electronics Corp. AP2306AGN-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP2306AGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE | |
2 | AP2306AGN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP2306AGEN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP2306AGEN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP2306CGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP2306GN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | AP2306GN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | AP2306GN-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
9 | AP2306N |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
10 | AP2306N |
VBsemi |
N-Channel MOSFET | |
11 | AP2301 |
BCD Semiconductor |
1.5A DDR TERMINATION REGULATOR | |
12 | AP2301 |
Diodes Incorporated |
2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH |