AP1001BSQ - Advanced Power Electronics

AP1001BSQ N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The AP1001BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC con.

Features

A ℃ ℃ Continuous Drain Current, V GS @ 10V4 Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range Single Pulse Avalanche Energy Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 3.7 58 ℃/W ℃/W 1 201106013 Data and specifications subject to change without notice AP1001BSQ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resist.