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AP1001BSQ |
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| Part Number | AP1001BSQ |
| Manufacturer | Advanced Power Electronics |
| Description | The AP1001BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The G... |
| Features |
A ℃ ℃
Continuous Drain Current, V GS @ 10V4 Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Single Pulse Avalanche Energy
Thermal Data
Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient
3
3.7 58
℃/W ℃/W 1 201106013
Data and specifications subject to change without notice
AP1001BSQ
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resist... |
| Document |
 AP1001BSQ Data Sheet
PDF 100.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP1001BSQ-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | AP100-B10 |
LEM |
AC Current transducer |
|
| 3 | AP100-B420L |
LEM |
AC Current transducer |
|
| 4 | AP1002BMX-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP1003BMP-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|