AP1003BST - Advanced Power Electronics

AP1003BST N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC con.

Features

-40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 1 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-ambient4 Maximum Thermal Resistance, Junction-ambient 3 3 58 ℃/W ℃/W 1 20100809pre Data and specifications subject to change without notice AP1003BST Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-.