AP1003BST-3 - Advanced Power Electronics

AP1003BST-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The AP1003BST-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-.

Features

rent 1 3 3 4 Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 4 Single Pulse Avalanche Energy Storage Temperature Range 28.8 24 -40 to 150 -40 to 150 Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 3 58 °C/W °C/W Ordering Information AP1003BST-3TR RoHS-compliant halogen-free GreenFET TM ST package, shipped on tape and reel (4800 pcs/reel) ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 20090923-3 PR.