AP09N70I-H-HF - Advanced Power Electronics

AP09N70I-H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications. TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ I.

Features

ergy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 32 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3 65 Units ℃/W ℃/W 1 201006082 Data & specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09N70I-H-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 3 Min. 700 2 - Typ. 0.6 4.5 44 11 .