AP09N70P-A - Advanced Power Electronics

AP09N70P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G D S TO-220 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Co.

Features

Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.8 62 Unit ℃/W ℃/W 200705053-1/4 Data & specifications subject to change without notice Free Datasheet http://www.datasheet4u.com/ AP09N70P-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.5 44 11 12 19 21 56 24 2660 170 10 Max. Units 0.75 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature.