AP09N70P-A-HF - Advanced Power Electronics

AP09N70P-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applicatio.

Features

ed Drain Current1 5A 40 A PD@TC=25℃ EAS Total Power Dissipation Single Pulse Avalanche Energy2 156 W 40.5 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 0.8 62 Unit ℃/W ℃/W 1 201501126 AP09N70P-A-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(.