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AP09N70I-H-HF |
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| Part Number | AP09N70I-H-HF |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S The TO-220CFM isolation pa... |
| Features |
ergy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
32 8 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3 65 Units ℃/W ℃/W 1 201006082
Data & specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP09N70I-H-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
3
Min. 700 2 -
Typ. 0.6 4.5 44 11 ... |
| Document |
 AP09N70I-H-HF Data Sheet
PDF 92.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AP09N70I-A |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| 2 | AP09N70I-A-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| 3 | AP09N70I-A-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET |
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| 4 | AP09N70P |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| 5 | AP09N70P-A |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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