AOTF10N50FDL - Alpha & Omega Semiconductors

AOTF10N50FDL 10A N-Channel MOSFET

The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Product .

Features

V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25° C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC
* Drain current limited by maximum junction temperature. Rev.1.0: July 2013 www.aosmd.com Page 1 of 6 AOTF10N50FD Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATI.