AOTF10T60P - Alpha & Omega Semiconductors

AOTF10T60P N-Channel MOSFET

• Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 D Top View TO.

Features

ve avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt J VDS VGS ID IDM IAR EAR EAS dv/dt 10 6.6 TC=25°C Power Dissipation B Derate above 25°C PD 208 1.7 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL AOTF10T60P 600 ±30 10
* 6.6
* 40 10 50 480 50 15 43 0.3 -55 to 150 300 AOTF10T60PL 10
* 6.6
* 33 0.26 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT(B)10T6.