AOTF10N50FDL |
Part Number | AOTF10N50FDL |
Manufacturer | Alpha & Omega Semiconductors |
Description | The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low ... |
Features |
V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W
Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25° C PD Power Dissipation B Derate above 25oC Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev.1.0: July 2013
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AOTF10N50FD
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATI... |
Document |
AOTF10N50FDL Data Sheet
PDF 326.46KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AOTF10N50FD |
INCHANGE |
N-Channel MOSFET | |
2 | AOTF10N50FD |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
3 | AOTF10N60 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET | |
4 | AOTF10N60 |
INCHANGE |
N-Channel MOSFET | |
5 | AOTF10N65 |
Alpha & Omega Semiconductors |
10A N-Channel MOSFET |