AOTF10T60 - Alpha & Omega Semiconductors

AOTF10T60 N-Channel MOSFET

Product Summary The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power su.

Features

eak diode recovery dv/dt VDS VGS ID IDM IAR EAR EAS dv/dt 10 6.6 TC=25°C Power Dissipation B Derate above 25oC PD 208 1.7 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS Maximum Junction-to-Case RθJC
* Drain current limited by maximum junction temperature. AOT10T60 65 0.5 0.6 G S AOTF10T60 600 ±30 10
* 6.6
* 40 10 50 480 50 5 43 0.34 -55 to 150 AOTF10T60L 10
* 6.6
* 32 0.26 300 AOTF10T60 65 -2.9.