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isc N-Channel MOSFET Transistor AOT27S60 ·FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server an.
·Drain Current
–ID= 27A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.16Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
27
A
IDM
Drain Current-Single Pulsed
110
A
PD
Total Dissipation @TC=25℃
357
W
Tj
Ma.
AOT27S60 - Alpha & Omega Semiconductors
The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed .
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|---|---|---|---|---|
| 1 | AOT270AL |
INCHANGE |
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| 2 | AOT270AL |
Alpha & Omega Semiconductors |
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| 3 | AOT270L |
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| 4 | AOT20B65M1 |
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| 5 | AOT20N25 |
INCHANGE |
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| 6 | AOT20N25 |
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| 7 | AOT20N60 |
INCHANGE |
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| 8 | AOT20N60 |
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| 9 | AOT20S60 |
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| 10 | AOT20S60L |
Alpha & Omega Semiconductors |
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| 11 | AOT210L |
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| 12 | AOT210L |
Alpha & Omega Semiconductors |
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|