AOT20N25 - Alpha & Omega Semiconductors

AOT20N25 20A N-Channel MOSFET

Product Summary The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs..

Features

overy dv/dt VGS ID IDM IAS EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RθJA RθCS RθJC G AOT20N25 250 ±30 20 14 51 4.5 608 5 208 1.7 -55 to 150 300 AOT20N25 65 0.5 0.6 S Units V V A A mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev0: Oct 2011 www.aosmd.com Page 1 of 5 AOT20N25 Electrical Characteristics (TJ=25°C unless oth.