AOT20S60L - Alpha & Omega Semiconductors

AOT20S60L Power Transistor

Product Summary The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new a.

Features

pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-Case RqJC
* Drain current limited by maximum junction temperature. AOT20S60L/AOB20S60L AOTF20S60 600 ±30 20 20
* 14 14
* 80 3.4 23 188 266 50 2.1 0.4 100 20 -55 to 150 A.