AOT20N60 - Alpha & Omega Semiconductors

AOT20N60 20A N-Channel MOSFET

Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline po.

Features

e recovery dv/dt ID IDM IAR EAR EAS dv/dt 20 20
* 12 12
* 80 6.5 630 1260 5 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT20N60 65 0.5 AOTF20N60 65 -- Maximum Junction-to-Case RθJC
* Drain current limited by maximum junction temperature. 0.3 2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev2.