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AOT20S60L |
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| Part Number | AOT20S60L |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robu... |
| Features |
pulsed avalanche energy G
EAS
TC=25°C Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RqJA
Maximum Case-to-sink A
RqCS
Maximum Junction-to-Case
RqJC
* Drain current limited by maximum junction temperature.
AOT20S60L/AOB20S60L AOTF20S60
600
±30
20
20*
14
14*
80
3.4
23
188
266
50
2.1
0.4
100
20
-55 to 150
A... |
| Document |
 AOT20S60L Data Sheet
PDF 581.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOT20S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 2 | AOT20B65M1 |
Alpha & Omega Semiconductors |
IGBT |
|
| 3 | AOT20N25 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | AOT20N25 |
Alpha & Omega Semiconductors |
20A N-Channel MOSFET |
|
| 5 | AOT20N60 |
INCHANGE |
N-Channel MOSFET |
|