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AOT20N60 |
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| Part Number | AOT20N60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC app... |
| Features |
e recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
20 20* 12 12*
80 6.5 630 1260 5
TC=25°C Power Dissipation B Derate above 25oC
PD
417 3.3
50 0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
AOT20N60 65 0.5
AOTF20N60 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.3
2.5
S
Units V V
A
A mJ mJ V/ns W W/ oC °C °C
Units °C/W °C/W °C/W
Rev2... |
| Document |
 AOT20N60 Data Sheet
PDF 536.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOT20N60 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOT20N25 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | AOT20N25 |
Alpha & Omega Semiconductors |
20A N-Channel MOSFET |
|
| 4 | AOT20B65M1 |
Alpha & Omega Semiconductors |
IGBT |
|
| 5 | AOT20S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|