AON6426 - Alpha & Omega Semiconductors

AON6426 30V N-Channel MOSFET

The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS (V) = 30V ID = 65A RDS(ON) < 5.5mW RDS(ON) < 7.5mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! Top View DFN5X6 Bott.

Features

cteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 24 53 30 64 Maximum Junction-to-Case Steady-State RqJC 2.6 3 Rev.2.1: January 2024 www.aosmd.com D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Page 1 of 6 AON6426 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 36.7 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body .