AOB2918L - Alpha & Omega Semiconductors

AOB2918L 100V N-Channel MOSFET

Product Summary The AOT2918L & AOB2918L & AOTF2918L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode.This device is.

Features

45 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10µs IDSM IAS, IAR EAS, EAR VSPIKE 13 10 35 61 120 TC=25°C Power Dissipation B TC=100°C PD 267 133 41 20 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.33 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC AOT2918L/AOB2918L 15 60 0.56 AOTF2918L 15 60 3.6 G S Units V V A A A mJ V W W °C Uni.