AOB2906 - Alpha & Omega Semiconductors

AOB2906 100V N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charger • Optimized fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100V 122A < 6.2mΩ < 7.2mΩ < 5.9mΩ∗ < 6.9mΩ∗ Applications • Synchronous Rectifiers in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Teste.

Features

DS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 122 90 310 25.5 20.5 33 54 120 187 94 8.3 5.3 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State
* Surface mount package TO263(AOB2906) Symbol RθJA RθJC Typ 12 50 0.62 Max 15 60 0.8 Units °C/W °C/W °C/W Rev.2.0: May 2016 www.aosmd.com Page 1 of 6 AOT2906/AOB2906 Electr.