AOB2910L - Alpha & Omega Semiconductors

AOB2910L 100V N-Channel MOSFET

Product Summary The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rec.

Features

22 21 15.5 80 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS 6.0 4.5 15 11 TC=25°C Power Dissipation B TC=100°C PD 50 25 27 13.5 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC AOT2910L/AOB2910L 15 60 3 AOTF2910L 15 60 5.5
* Surface mount package TO263 G S Units V V A A A mJ W W °C Units.