AOB290L - Alpha & Omega Semiconductors

AOB290L 100V N-Channel MOSFET

Product Summary The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost .

Features

he Current C Avalanche energy L=0.1mH C VDS Spike I 10μs IDSM IAS, IAR EAS, EAR VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 140 110 500 18 15 100 500 120 500 250 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
* Surface mount package TO263 t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 50 0.25 Max 15 60 0.3 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.4.1: .