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isc N-Channel MOSFET Transistor AOB262L ·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.8mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and.
·Drain Current
–ID= 140A@ TC=25℃
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2.8mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
140
A
IDM
Drain Current-Single Pulsed
500
A
PD
Total Dissipation @TC=25℃
333
W
Tj
Ma.
AOB262L - Alpha & Omega Semiconductors
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AOB2606L |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOB2606L |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
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| 3 | AOB2608L |
INCHANGE |
N-Channel MOSFET |
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| 4 | AOB2608L |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
|
| 5 | AOB260L |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
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| 6 | AOB260l |
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N-Channel MOSFET |
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| 7 | AOB2618L |
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| 8 | AOB2618L |
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| 9 | AOB264L |
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| 10 | AOB264L |
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| 11 | AOB266L |
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| 12 | AOB266L |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
|