AOB260L - Alpha & Omega Semiconductors

AOB260L 60V N-Channel MOSFET

Product Summary The AOT(B)260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.This device is idea.

Features

t TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G AOB260L Maximum 60 ±20 140 110 500 20 16 128 819 330 165 1.9 1.2 -55 to 175 G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 54 0.35 Max 15 65 0.45 G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.0 : November 2013 www.aosmd..