AOB2618L - Alpha & Omega Semiconductors

AOB2618L 60V N-Channel MOSFET

Product Summary The AOT2618L & AOB2618L & AOTF2618L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rec.

Features

rent C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 60 ±20 23 22 18 16 70 7 5.5 23 26 41.5 23.5 20.5 11.5 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC AOT2618L/AOB2618L 15 60 3.6 AOTF2618L 15 60 6.4 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0 : June 2024 www.aosmd.com P.