AOB2606L - Alpha & Omega Semiconductors

AOB2606L 60V N-Channel MOSFET

The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consum.

Features

sipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
* Surface mount package TO263 C AOTF2606L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 115 57.5 72 56 ±20 54 38 260 13 10 60 180 36.5 18 2.1 1.3 -55 to 175 A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC AOT2606L/AOB2606L 15 60 1.3 AOTF2606L 15 60 4.1 Units ° C/W ° C/W ° C/W Rev 1 : Mar. 2012 www.aosmd.com Page 1 of 7 Fre.