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Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 & AOTF25S65L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and.
EAR
Single pulsed avalanche energy G
EAS
25
25
*
16
16
*
104
7
96
750
TC=25°C Power Dissipation B Derate above 25oC
PD
357
50
2.9
0.4
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
100 20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Symbol RqJA RqCS
AOT25S65/AOB25S65 65 0.5
AOTF25S65 65 --
Maximum Junction-to-Case
RqJC
0.35
2.5
* Drain current limited by maximum.
AOB25S65 - INCHANGE
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AOB2500L |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOB2500L |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 3 | AOB2502L |
INCHANGE |
N-Channel MOSFET |
|
| 4 | AOB2502L |
Alpha & Omega Semiconductors |
150V N-Channel MOSFET |
|
| 5 | AOB254L |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOB254L |
Alpha & Omega Semiconductors |
150V N-Channel MOSFET |
|
| 7 | AOB256L |
INCHANGE |
N-Channel MOSFET |
|
| 8 | AOB256L |
Alpha & Omega Semiconductors |
150V N-Channel MOSFET |
|
| 9 | AOB20B65M1 |
Alpha & Omega Semiconductors |
IGBT |
|
| 10 | AOB20S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 11 | AOB20S60 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | AOB20S60L |
Alpha & Omega Semiconductors |
Power Transistor |
|