AOB256L - Alpha & Omega Semiconductors

AOB256L 150V N-Channel MOSFET

The AOB256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial .

Features

TJ, TSTG A A mJ W W ° C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 50 1.5 Max 15 60 1.8 Units ° C/W ° C/W ° C/W Rev 0: August 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOB256L Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA,.