AOB2500L - Alpha & Omega Semiconductors

AOB2500L N-Channel MOSFET

Product Summary The AOT2500L/AOB2500L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for co.

Features

alanche energy L=0.3mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G AOB2500L Maximum 150 ±20 152 107 440 11.5 9.0 65 634 375 187.5 2.1 1.3 -55 to 175 G G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 48 0.26 Max 15 60 0.4
* Surface mount package TO263 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1. 0: July 2013 www.aosmd.com Page 1.