AO3438 - Alpha & Omega Semiconductors

AO3438 N-Channel MOSFET

The AO3438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. A Product Summary VDS = 20V ID = 3A RDS(ON) < 62mΩ RDS(ON) < 70mΩ RDS(ON) < 85mΩ (VGS = 4.5V) (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) SOT23 Top V.

Features

V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO3438 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±8V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 0.7 1 V ID(ON) On state drain current VGS=4.5V, VDS=5V 16 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3A VGS=2.5V, ID=2.8A T.