AO3434 - Alpha & Omega Semiconductors

AO3434 30V N-Channel MOSFET

The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Product Summary VDS (V) = 30V ID = 4.2A RDS(ON) < 52mΩ RDS(ON) < 75mΩ ESD protected (VGS = 10V) (VGS = 10V) (VGS = 4.5V) SOT23 Top View Bottom View D D D S G G S .

Features

Units V V A W °C Units °C/W °C/W °C/W Rev.4. 0: August 2013 www.aosmd.com Page 1 of 4 AO3434 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=10V, ID=4.2A VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=4.2A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-D.